2N3209DCSM Datasheet, PDF (1/2 Pages) Seme LAB – DUAL HIGH SPEED, MEDIUM POWER PNP GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE

SEME
LAB
MECHANICAL DATA
Dimensions in mm (inches)
2N3209DCSM
DUAL HIGH SPEED, MEDIUM POWER
PNP GENERAL PURPOSE TRANSISTOR
IN A HERMETICALLY SEALED
CERAMIC SURFACE MOUNT PACKAGE
2.29 ± 0.20
(0.09 ± 0.008)
1.65 ± 0.13
(0.065 ± 0.005)
1.40 ± 0.15
(0.055 ± 0.006)
2
3
1
A
6
4
5
0.23
(0.009)
r
ad.
6.22 ± 0.13
(0.245 ± 0.005)
A
=
1.27 ± 0.13
(0.05 ± 0.005)
LCC2 PACKAGE
Underside View
PAD 1 - Collector 1
PAD 2 - Base 1
PAD 3 - Base 2
PAD 4 - Collector 2
PAD 5 - Emitter 2
PAD 6 - Emitter 1
FEATURES
• SILICON PLANAR EPITAXIAL DUAL PNP
TRANSISTOR
• HERMETIC CERAMIC SURFACE MOUNT
PACKAGE
• CECC SCREENING OPTIONS AVAILABLE
• SPACE QUALITY LEVELS OPTIONS
• HIGH SPEED SATURATED SWITCHING
APPLICATIONS:
For high reliablitity general purpose
applications requiring small size and low
weight devices.
ABSOLUTE MAXIMUM RATINGS(T_case = 25°C unless otherwise stated)
V_CBO
Collector – Base Voltage
V_CEO
Collector – Emitter Voltage
V_EBO
Emitter – Base Voltage
I_C
Collector Current
P_D
Device Dissipation
P_D
Derate above 50°C
R_ja
Thermal Resistance Junction to Ambient
T_j
Max Junction Temperature
T_stg
Storage Temperature
PER SIDE
TOTAL
–20V
–20V
–4V
–200mA
300mW
500mW
2mW / °C 3.3mW / °C
420°C / W
250°C / W
200°C
–65 to 200°C
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E-mail: [e-mail] Website: http://www.semelab.co.uk
Prelim. 2/00