2N3114CSM_09 Datasheet, PDF (1/3 Pages) Seme LAB – SILICON PLANAR EPITAXIAL NPN TRANSISTOR

SILICON PLANAR EPITAXIAL
NPN TRANSISTOR
2N3114CSM
• High Voltage
• Hermetic Ceramic Surface Mount Package
• Designed For Low Noise General Purpose Amplifiers,
Driver Stages and Signal Processing Applications
• Screening Options Available
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated)
VCBO
Collector – Base Voltage
150V
VCEO
Collector – Emitter Voltage
150V
VEBO
Emitter – Base Voltage
5V
IC
Continuous Collector Current
150mA
PD
Total Power Dissipation at ^{TA = 25°C}
350mW
Derate Above 25°C
2mW/°C
TJ
Junction Temperature Range
-65 to +200°C
Tstg
Storage Temperature Range
-65 to +200°C
THERMAL PROPERTIES
Symbols Parameters
R_θJA
Thermal Resistance, Junction To Ambient
Min. Typ. Max. Units
500 °C/W
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
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Document Number 5293
Issue 2
Page 1 of 3