2N3053 Datasheet, PDF (1/2 Pages) Seme LAB – MEDIUM POWER SILICON NPN PLANAR TRANSISTOR

2N3053
MECHANICAL DATA
Dimensions in mm (inches)
4.19 (0.165)
4.95 (0.195)
8.89 (0.35)
9.40 (0.37)
7.75 (0.305)
8.51 (0.335)
12.70
(0.500)
min.
0.89 _max.
(0.035)
7.75 (0.305)
8.51 (0.335)
dia.
5.08 (0.200)
typ.
0.66 (0.026)
1.14 (0.045)
0.71 (0.028)
0.86 (0.034)
2
1
3
2.54
(0.100)
45˚
TO39 PACKAGE
Underside View
Pin 1 = Emitter Pin 2 = Base Pin 3 = Collector
MEDIUM POWER SILICON
NPN PLANAR TRANSISTOR
FEATURES
• V_{CEO =} 40V
• I_C = 0.7A
• P_tot = 5W
ABSOLUTE MAXIMUM RATINGS (T_case = 25°C unless otherwise stated)
V_CBO
Collector – Base Voltage
60V
V_CEO
Collector – Emitter Voltage
40V
V_CER
Collector – Emitter Sustaining Voltage
50V
V_CEX
Collector - Emiiter Voltage
60V
V_EBO
Emitter-Base Voltage
5V
I_C
Collector Current
0.7A
P_TOT
Power Dissipation T_amb = 25°C
1W
T_case = 25°C
5W
T_j
Junction Temperature
200°C
T_stg
Storage Temperature
–65 to 200°C
R_th(jc)
Thermal Resistance Junction to Case
35°C / W
R_th(ja)
Thermal Resistance Junction to Ambient
175°C / W
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Prelim.01/01