2N3019 Datasheet, PDF (1/2 Pages) NXP Semiconductors – NPN medium power transistor

2N3019
MECHANICAL DATA
Dimensions in mm (inches)
NPN SILICON TRANSISTOR
4.19 (0.165)
4.95 (0.195)
8.89 (0.35)
9.40 (0.37)
7.75 (0.305)
8.51 (0.335)
12.70
(0.500)
min.
0.89 _max.
(0.035)
7.75 (0.305)
8.51 (0.335)
dia.
FEATURES
• NPN High Voltage Planar Transistor
• Hermetic TO39 Package
• Full Screening Options Available
5.08 (0.200)
typ.
0.66 (0.026)
1.14 (0.045)
0.71 (0.028)
0.86 (0.034)
2
1
3
2.54
(0.100)
45˚
TO39 PACKAGE
Underside View
Pin 1 = Emitter Pin 2 = Base Pin 3 = Collector
ABSOLUTE MAXIMUM RATINGS (T_case = 25°C unless otherwise stated)
V_CBO
Collector – Base Voltage
140V
V_CEO
Collector – Emitter Voltage
80V
V_EBO
Emitter – Base Voltage
7V
I_C
Collector Current
1A
P_D
Total Device Dissipation @ T_A = 25°C
0.8W
P_D
Derate above 25°C
4.6mW / °C
P_D
Total Device Dissipation @ T_C = 25°C
5W
P_D
Derate above 25°C
28.6mW / °C
T_j
Max Junction Temperature
200°C
T_stg
Storage Temperature
–55 to 200°C
R_jc
Thermal Resistance Junction to Case
16.5°C / W
R_ja
Thermal Resistance Junction to Ambient
89.5°C / W
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