2N2907AQCSM Datasheet, PDF (1/3 Pages) Seme LAB – QUAD SILICON PLANAR EPITAXIAL PNP TRANSISTORS

QUAD SILICON PLANAR
EPITAXIAL PNP TRANSISTORS
2N2907AQCSM
• Low Power, High Speed Saturated Switching
• Hermetic Surface Mounted Package.
• Ideally suited for High Speed Switching
and General Purpose Applications
• Screening Options Available
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated)
Per Device Total Package
VCBO
Collector – Base Voltage
-60V
VCEO
Collector – Emitter Voltage
-60V
VEBO
Emitter – Base Voltage
-5V
IC
Continuous Collector Current
-600mA
PD
Total Power Dissipation at ^{TA = 25°C}
500mW
2W
Derate Above 37.5°C 3.08mW/°C 12.3mW/°C
TJ
Junction Temperature Range
-65 to +200°C
Tstg
Storage Temperature Range
-65 to +200°C
THERMAL PROPERTIES (Each Device)
Symbols Parameters
R_θJA
Thermal Resistance, Junction To Ambient
Min. Typ. Max. Units
325 °C/W
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
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Document Number 8325
Issue 1
Page 1 of 3