2N2907AC1 Datasheet, PDF (1/4 Pages) Seme LAB – SILICON PLANAR EPITAXIAL PNP TRANSISTOR

SILICON PLANAR
EPITAXIAL PNP TRANSISTOR
2N2907AC1
• Low Power, High Speed Saturated Switching
• Hermetic Surface Mounted Package.
• Ideally suited for High Speed Switching
and General Purpose Applications
• Screening Options Available
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated)
VCBO
Collector – Base Voltage
-60V
VCEO
Collector – Emitter Voltage
-60V
VEBO
Emitter – Base Voltage
-5V
IC
Continuous Collector Current
-600mA
PD
Total Power Dissipation at ^{TA = 25°C}
500mW
Derate Above 37.5°C
3.08mW/°C
TJ
Junction Temperature Range
-65 to +200°C
Tstg
Storage Temperature Range
-65 to +200°C
THERMAL PROPERTIES (Each Device)
Symbols Parameters
R_θJA
Thermal Resistance, Junction To Ambient
Min. Typ. Max. Units
325 °C/W
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
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Website: http://www.semelab-tt.com
Document Number 8358
Issue 2
Page 1 of 4