2N2905A Datasheet, PDF (1/2 Pages) Seme LAB – HIGH SPEED MEDIUM POWER PNP SWITCHING TRANSISTOR

SEME
LAB
MECHANICAL DATA
Dimensions in mm (inches)
8.89 (0.35)
9.40 (0.37)
7.75 (0.305)
8.51 (0.335)
4.19 (0.165)
4.95 (0.195)
2N2905A
HIGH SPEED
MEDIUM POWER
PNP SWITCHING TRANSISTOR
12.70
(0.500)
min.
0.89 _max.
(0.035)
7.75 (0.305)
8.51 (0.335)
dia.
0.66 (0.026)
1.14 (0.045)
0.71 (0.028)
0.86 (0.034)
5.08 (0.200)
typ.
2
1
3
2.54
(0.100)
FEATURES
• SILICON PLANAR EPITAXIAL PNP
TRANSISTOR
• HIGH SPEED SATURATED SWITCHING
• ALSO AVAILABLE IN CERAMIC SURFACE
MOUNT PACKAGE
• CECC SCREENING OPTIONS
• SPACE QUALITY LEVELS OPTIONS
45˚
TO39 METAL PACKAGE
Underside View
PIN 1 – Emitter PIN 2 – Base PIN 3 – Collector
ABSOLUTE MAXIMUM RATINGS (T_A = 25°C unless otherwise stated)
V_CBO
Collector - Base Voltage
–60V
V_CEO
Collector - Emitter Voltage
–60V
V_EBO
Emitter - Base Voltage
–5V
I_C
Collector Current Continuous
600mA
P_D
Total Device Dissipation @ T_A = 25°C
600mW
Derate above 25°C
3.43mW / °C
P_D
Total Device Dissipation @ T_C = 25°C
Derate above 25°C
3W
17.2mW / °C
T_J , T_STG Operating and Storage Junction Temperature Range
–65 to +200°C
THERMAL CHARACTERISTICS
R_qJA Thermal Resistance, Junction to Ambient
R_qJC Thermal Resistance, Junction to Case
292°C/W
58°C/w
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Prelim. 6/99