2N2904A_09 Datasheet, PDF (1/3 Pages) Seme LAB – SILICON PLANAR EPITAXIAL PNP TRANSISTOR

SILICON PLANAR EPITAXIAL
PNP TRANSISTOR
2N2904A
• Low Power
• Hermetic TO-39 Metal package.
• Ideally suited for High Speed Switching
and General Purpose Applications
• Screening Options Available
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated)
VCBO
Collector – Base Voltage
-60V
VCEO
Collector – Emitter Voltage
-60V
VEBO
Emitter – Base Voltage
-5V
IC
Continuous Collector Current
-600mA
PD
Total Power Dissipation at ^{TA = 25°C}
600mW
Derate Above 25°C
3.43mW/°C
PD
Total Power Dissipation at ^{TC = 25°C}
3W
Derate Above 25°C
17.2mW/°C
TJ
Junction Temperature Range
-65 to +200°C
Tstg
Storage Temperature Range
-65 to +200°C
THERMAL PROPERTIES
Symbols Parameters
R_θJA
Thermal Resistance, Junction To Ambient
R_θJC
Thermal Resistance, Junction To Case
Min.
Typ.
Max. Units
291.7 °C/W
58.3 °C/W
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone [phone] Fax [phone] Email: [e-mail]
Document Number 8076
Website: http://www.semelab-tt.com
Issue 1
Page 1 of 3