2N2896 Datasheet, PDF (1/2 Pages) Seme LAB – NPN SILICON TRANSISTOR

2N2896
MECHANICAL DATA
Dimensions in mm (inches)
5.84 (0.230)
5.31 (0.209)
4.95 (0.195)
4.52 (0.178)
NPN SILICON TRANSISTOR
FEATURES
0.48 (0.019)
0.41 (0.016)
dia.
2.54 (0.100)
Nom.
• NPN High Voltage Planar Transistor
• Hermetic TO18 Package
31
2
• Full Screening Options Available
TO–18 METAL PACKAGE
Underside View
PIN 1 – Emitter PIN 2 – Base PIN 3 – Collector
ABSOLUTE MAXIMUM RATINGS (T_case = 25°C unless otherwise stated)
V_CBO
V_CEO
VCER
Collector – Base Voltage
Collector – Emitter Voltage (I_B = 0)
Collector - Emitter Voltage
140V
90V
140V
V_EBO
I_C
P_D
Emitter – Base Voltage (I_B = 0)
Collector Current
Total Device Dissipation T_A = 25 °C
Derate above 25°C
7V
1A
0.5W
2.86mW / °C
P_D
Total Device Dissipation T_C = 25 °C
Derate above 25°C
1.8W
10.3mW / °C
T_stg
R_θJA
R_θJC
Storage Temperature
Thermal Resistance Junction to Ambient
Thermal Resistance Junction to Case
–65 to 200°C
350°C/W
97°C/W
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to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
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Document Number 5976
Issue 1