2N2894AC1 Datasheet, PDF (1/4 Pages) Seme LAB – HIGH SPEED PNP SILICON BIPOLAR TRANSISTOR

HIGH SPEED PNP
SILICON BIPOLAR TRANSISTOR
2N2894AC1
• Hermetic Ceramic Surface Mount Package (SOT23 Compatible)
• Silicon Planar Epitaxial PNP Transistor
• High Speed low Saturation Switching
• Space Level and High-Reliability Screening Options Available
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated)
VCBO
Collector – Base Voltage
-12V
VCEO
Collector – Emitter Voltage
-12V
VEBO
Emitter – Base Voltage
-4.5V
IC
Continuous Collector Current
-200mA
PD
Total Power Dissipation at ^{TA = 25°C}
360mW
Derate Above 25°C
2.88mW/°C
TJ
Junction Temperature Range
-65 to +150°C
Tstg
Storage Temperature Range
-65 to +150°C
THERMAL PROPERTIES
Symbol Parameter
R_θJA
Thermal Resistance Junction to Ambient
Max Units
347 °C/W
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Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing an order.
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Document Number 8519
Issue 1
Page 1 of 4