2N2880-220M Datasheet, PDF (1/2 Pages) Seme LAB – NPN POWER SILICON TRANSISTOR

2N2880-220M
MECHANICAL DATA
Dimensions in mm (inches)
10.41
10.67
0.70
0.90
4.70
5.00
3.56
3.81
Dia.
123
NPN POWER
SILICON TRANSISTOR
FOR HI–REL
APPLICATIONS
FEATURES
• HERMETICALLY SEALED TO–220 METAL
PACKAGE
• ALL LEADS ISOLATED FROM CASE
• CECC, JAN AND SPACE LEVEL
SCREENING OPTIONS AVAILABLE
2.54
BSC
2.65
2.75
0.89
1.14
TO–220M (TO-257AB) – Metal Package
Pad 1 – Base
Pad 2 – Collector Pad 3 – Emitter
ABSOLUTE MAXIMUM RATINGS (T_C = 25°C unless otherwise stated)
V_CBO
Collector – Base Maximum Voltage
110V
V_CEO
Collector – Emitter Maximum Voltage
80V
V_EBO
Emitter – Base Maximum Voltage
8.0V
I_C
Maximum Continious Collector Current
5.0A
I_B
Maximum Continious Base Current
500mA
P_TOT
Power Dissipation @ T_C = 100°C
20W
Linear Derating Factor > T_C = 100°C
0.2W/°C
T_J , T_stg Operating and Storage Temperature Range
–65°C to 200°C
R_θJC
Thermal Resistance Junction to Case
5.0°C/W max.
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc. Telephone [phone]. Fax [phone].
E-mail: [e-mail] Website: http://www.semelab.co.uk
Document Number 5550
Issue 2