2N2857C1_10 Datasheet, PDF (1/4 Pages) Seme LAB – SILICON RF SMALL SIGNAL NPN TRANSISTOR

SILICON RF SMALL SIGNAL
NPN TRANSISTOR
2N2857C1
• High Current Gain-Bandwidth Product (fT)
• Hermetic Ceramic Surface Mount Package
• Designed For High Gain, Low Noise Amplifier,
Oscillator and Mixer Applications
• Screening Options Available
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated)
VCBO
Collector – Base Voltage
30V
VCEO
Collector – Emitter Voltage
15V
VEBO
Emitter – Base Voltage
3V
IC
Continuous Collector Current
40mA
PD
Total Power Dissipation at ^{TA = 25°C}
200mW
Derate Above 25°C
1.14mW/°C
PD
Total Power Dissipation at ^{TC = 25°C}
300mW
Derate Above 25°C
1.72mW/°C
TJ
Junction Temperature Range
-65 to +200°C
Tstg
Storage Temperature Range
-65 to +200°C
THERMAL PROPERTIES
Symbols Parameters
R_θJA
Thermal Resistance, Junction To Ambient
R_θJC
Thermal Resistance, Junction To Case
Max.
875
583.3
Units
°C/W
°C/W
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
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Document Number 7726
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