2N2484 Datasheet, PDF (1/3 Pages) NXP Semiconductors – NPN general purpose transistor

SEME
LAB
MECHANICAL DATA
Dimensions in mm (inches)
5.84 (0.230)
5.31 (0.209)
4.95 (0.195)
4.52 (0.178)
2N2484
NPN SILICON
AMPLIFIER TRANSISTOR
FEATURES
• SILICON PLANAR EPITAXIAL NPN
TRANSISTOR
0.48 (0.019)
0.41 (0.016)
dia.
2.54 (0.100)
Nom.
31
2
TO18
PIN 1 = Emitter PIN 2 = Base PIN 3 = Collector
ABSOLUTE MAXIMUM RATINGS (T_A = 25°C unless otherwise stated)
V_CBO
Collector – Base Voltage
V_CEO
Collector – Emitter Voltage
V_EBO
Emitter – Base Voltage
I_C
Collector Current Continuous
P_D
Total Device Dissipation @ T_A =25°C
Derate above 25°C
60V
60V
6V
50mA
360mW
2.06mW / °C
P_D
Total Device Dissipation @ T_C =25°C
Derate above 25°C
1.2W
6.85mW / °C
T_STG , T_J
Operating and Storage Temperature Range
–65 to +200°C
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Document. 2359
Issue 1