2N2222A_09 Datasheet, PDF (1/2 Pages) Seme LAB – HIGH SPEED MEDIUM POWER, NPN SWITCHING TRANSISTOR

SEME
LAB
MECHANICAL DATA
Dimensions in mm (inches)
5 .8 4 (0 .2 3 0 )
5 .3 1 (0 .2 0 9 )
4 .9 5 (0 .1 9 5 )
4 .5 2 (0 .1 7 8 )
0 .4 8 (0 .0 1 9 )
0 .4 1 (0 .0 1 6 )
d ia .
2 .5 4 (0 .1 0 0 )
N om .
)
)
0
0
1
7
2
1
.
.
0
0
(
(
3
2
3
3
.
.
5
4
)
0
0
5
.
.
n
i
0
(
m
7
.
2
1
2N2222A
HIGH SPEED
MEDIUM POWER, NPN
SWITCHING TRANSISTOR
FEATURES
• SILICON PLANAR EPITAXIAL NPN
TRANSISTOR
• HIGH SPEED SATURATED SWITCHING
• ALSO AVAILABLE IN CERAMIC SURFACE
MOUNT PACKAGE
!

TO–18 METAL PACKAGE (TO-206AA)
Underside View
PIN 1 – Emitter PIN 2 – Base PIN 3 – Collector
ABSOLUTE MAXIMUM RATINGS (T_A = 25°C unless otherwise stated)
V_CBO
Collector – Base Voltage
75V
V_CEO
Collector – Emitter Voltage
40V
V_EBO
Emitter – Base Voltage
6V
I_C
Collector Current
800mA
P_D
Total Device Dissipation @ T_A = 25°C
0.5W
Derate above 25°C
3.33mW / °C
P_D
Total Device Dissipation @ T_C = 25°C
Derate above 25°C
1.8W
12.05mW / °C
T_J
T_STG
Operating Junction Temperature
Storage Junction Temperature Range
175°C
–65 to +200°C
Semelab plc. Telephone [phone]. Telex: 341927. Fax [phone].
Document Number 3554
Issue 1