2N2222AQCSM Datasheet, PDF (1/3 Pages) Seme LAB – QUAD SILICON PLANAR EPITAXIAL NPN TRANSISTORS

QUAD SILICON PLANAR
EPITAXIAL NPN TRANSISTORS
2N2222AQCSM
• High Speed Saturated Switching
• Hermetic Surface Mounted Package.
• Ideally suited for High Speed Switching
and General Purpose Applications
• Screening Options Available
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated)
Per Device Total Package
VCBO
Collector – Base Voltage
75V
VCEO
Collector – Emitter Voltage
50V
VEBO
Emitter – Base Voltage
6V
IC
Continuous Collector Current
800mA
PD
Total Power Dissipation at ^{TA = 25°C}
500mW
2W
Derate Above 37.5°C 3.08mW/°C 12.3mW/°C
TJ
Junction Temperature Range
-65 to +200°C
Tstg
Storage Temperature Range
-65 to +200°C
THERMAL PROPERTIES (Each Device)
Symbols Parameters
R_θJA
Thermal Resistance, Junction To Ambient
Min. Typ. Max. Units
325 °C/W
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
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Document Number 8348
Issue 2
Page 1 of 3