2N2222AC3A Datasheet, PDF (1/3 Pages) Seme LAB – SILICON SWITCHING NPN TRANSISTOR

SILICON SWITCHING
NPN TRANSISTOR
2N2222AC3A, 2N2222AC3B
2N2222AC3C
• High Speed Saturated Switching
• Hermetic LCC3 Ceramic package.
• Variant B to MIL-PRF-19500/255 outline
• Screening Options Available
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated)
VCBO
Collector – Base Voltage
75V
VCEO
Collector – Emitter Voltage
50V
VEBO
Emitter – Base Voltage
6V
IC
Continuous Collector Current
0.8A
PD
Total Power Dissipation at ^{TA = 25°C}
500mW
Derate Above 25°C
2.86mW/°C
TJ
Junction Temperature Range
-65 to +200°C
Tstg
Storage Temperature Range
-65 to +200°C
THERMAL PROPERTIES
Symbols Parameters
R_θJA⁽¹⁾
Thermal Resistance, Junction To Ambient
R_θJSP(IS)⁽²⁾
Thermal Resistance Junction to Solder Pads
Max.
325
110
Units
°C/W
°C/W
(1) _{For non-thermal conductive PCB or unknown PCB surface mount conditions in free air.}
(2) _{Infinite sink mount to PCB.}
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
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Document Number 9192
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