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2N2222A Datasheet, PDF (1/2 Pages) Seme LAB – HIGH SPEED MEDIUM POWER, NPN SWITCHING TRANSISTOR
SEME
LAB
MECHANICAL DATA
Dimensions in mm (inches)
5.84 (0.230)
5.31 (0.209)
4.95 (0.195)
4.52 (0.178)
2N2222A
HIGH SPEED
MEDIUM POWER, NPN
SWITCHING TRANSISTOR
0.48 (0.019)
0.41 (0.016)
dia.
2.54 (0.100)
Nom.
FEATURES
• SILICON PLANAR EPITAXIAL NPN
TRANSISTOR
• HIGH SPEED SATURATED SWITCHING
• ALSO AVAILABLE IN CERAMIC SURFACE
MOUNT PACKAGE
31
2
TO–18 METAL PACKAGE
Underside View
PIN 1 – Emitter PIN 2 – Base PIN 3 – Collector
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated)
VCBO
Collector – Base Voltage
75V
VCEO
Collector – Emitter Voltage
40V
VEBO
Emitter – Base Voltage
6V
IC
Collector Current
800mA
PD
Total Device Dissipation @ TA = 25°C
0.5mW
Derate above 25°C
2.28mW / °C
PD
Total Device Dissipation @ TC = 25°C
Derate above 25°C
1.2W
6.85mW / °C
TJ , TSTG Operating and Storage Junction Temperature Range
–65 to +200°C
Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 3/96