2N1132CSM Datasheet, PDF (1/2 Pages) Seme LAB – HIGH SPEED MEDIUM POWER

2N1132CSM
MECHANICAL DATA
Dimensions in mm (inches)
HIGH SPEED
MEDIUM POWER
PNP SWITCHING TRANSISTOR
0.51 ± 0.10
(0.02 ± 0.004)
3
(00..03112)rad.
1.02 ± 0.10
(0.04 ± 0.004)
FEATURES
• SILICON PNP TRANSISTOR.
• HIGH SPEED SWITCHING
• SCREENING OPTIONS AVAILABLE
2
1
1.91 ± 0.10
(0.075 ± 0.004)
3.05 ± 0.13
(0.12 ± 0.005)
0.31
(0.012)
rad.
1.40
(0.055)
max.
LCC1 PACKAGE
Pad 1 - Base Pad 2 - Emitter Pad 3 - Collector
APPLICATIONS
• SMALL SIGNAL GENERAL PURPOSE
AND SWITCHING APPLICATIONS
ABSOLUTE MAXIMUM RATINGS
T_CASE = 25°C unless otherwise stated
V_CBO
Collector - Base Voltage
V_CEO
V_EBO
Collector - Emitter Voltage (I_B = 0)
Emitter – Base Voltage (I_C = 0)
I_C
Continuous Collector Current
P_D
Total Power Dissipation at T_Amb = 25°C
Derate Above 25°C
T_stg, T_J
Operating and Storage Temperature Range
50V
40V
5V
600mA
400mW
2.7mW/°C
-55 to +175°C
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be
both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab
encourages customers to verify that datasheets are current before placing orders.
Semelab plc. Telephone [phone]. Fax [phone].
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DOC 7518, ISSUE 1