2N1132 Datasheet, PDF (1/3 Pages) Microsemi Corporation – LOW POWER PNP SILICON TRANSISTOR

SILICON PLANAR
PNP TRANSISTOR
2N1132
• High Speed Switching
• Hermetic TO-39 Metal package.
• Ideally suited for Small Signal General Purpose
and Switching Applications
• Screening Options Available
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated)
VCBO
Collector – Base Voltage
-50V
VCEO
Collector – Emitter Voltage
-40V
VEBO
Emitter – Base Voltage
-5V
IC
Continuous Collector Current
-600mA
PD
Total Power Dissipation at ^{TA = 25°C}
600mW
Derate Above 25°C
3.4mW/°C
PD
Total Power Dissipation at ^{TC = 25°C}
2W
Derate Above 25°C
11.4mW/°C
TJ
Junction Temperature Range
-65 to +200°C
Tstg
Storage Temperature Range
-65 to +200°C
THERMAL PROPERTIES
Symbols Parameters
R_θJA
Thermal Resistance, Junction To Ambient
R_θJC
Thermal Resistance, Junction To Case
Min.
Typ.
Max.
292
87.5
Units
°C/W
°C/W
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
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Document Number 8069
Issue 1
Page 1 of 3