1N6642D2A Datasheet, PDF (1/4 Pages) Seme LAB – SILICON EPITAXIAL PLANAR DIODE

SILICON EPITAXIAL
PLANAR DIODE
1N6642D2A / 1N6642D2B
• Low Leakage
• Fast Switching
• Low Forward Voltage
• Hermetic Ceramic Package Designed as a Drop-In Replacement
for “D-5A”/”B-MELF” Package.
• Suitable for general purpose, switching applications.
• Space Level and High-Reliability Screening Options Available
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated)
VBR
Breakdown Voltage
100V
VRWM _{Working Peak Reverse Voltage}
75V
IO⁽¹⁾
Average Rectified Output Current, TA = 75°C
300mA
IFSM⁽²⁾
Surge Current (half sine wave, tp = 8.3ms)
2.5A
TJ
Junction Temperature Range
-65 to +200°C
Tstg
Storage Temperature Range
-65 to +200°C
THERMAL PROPERTIES
Symbols
Parameters
R_θJA(PCB)
Thermal Resistance, Junction To Ambient, On PCB
Max.
325
Units
°C/W
(1) IO is rated at 300mA @ TA = 75°C for PC boards where thermal resistance from mounting point to ambient is sufficiently controlled where
TJ(Max) does not exceed 200°C.
(2) TA = 25°C @ IO=0 and VRWM for ten 8.3mS surges at 1 minute intervals.
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone [phone] Fax [phone] Email: [e-mail]
Document Number 8272
Website: http://www.semelab-tt.com
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