1N6640D2A Datasheet, PDF (1/4 Pages) Seme LAB – SILICON EPITAXIAL PLANAR DIODE

SILICON EPITAXIAL
PLANAR DIODE
1N6640D2A / 1N6640D2B
• Low Leakage
• Fast Switching
• Low Forward Voltage
• Hermetic Ceramic Package Designed as a Drop-In Replacement
for “D-5A”/”A-MELF” Package.
• Suitable for general purpose, switching applications.
• Space Level and High-Reliability Screening Options Available
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated)
VBR
Breakdown Voltage
75V
VRWM _{Working Peak Reverse Voltage}
50V
IO⁽¹⁾
Average Rectified Output Current, TA = 75°C
300mA
IFSM
Surge Current (half sine wave, tp = 8.3ms)
2.5A
PD⁽¹⁾
Total Power Dissipation at ^{TA = 75°C}
TBD
Derate Above 75°C
TBD
PD
Total Power Dissipation at ^{TSP = 75°C}
TBD
Derate Above 75°C
TBD
TJ
Junction Temperature Range
-65 to +175°C
Tstg
Storage Temperature Range
-65 to +175°C
THERMAL PROPERTIES
Symbols
Parameters
R_θJA(PCB)⁽¹⁾
Thermal Resistance, Junction To Ambient, On PCB
R_θJSP
(1)
Thermal Resistance, Junction To Solder Pads
Thermal PCB rating to be determined
Max.
TBD
TBD
Units
°C/W
°C/W
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
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Document Number 8953
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Issue 1
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