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| 1N4149CSM Datasheet, PDF (1/1 Pages) Seme LAB – SILICON EPITAXIAL PLANAR DIODE | |||
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SEME
LAB
1N4149CSM
MECHANICAL DATA
Dimensions in mm (inches)
0.51 ± 0.10
(0.02 ± 0.004)
3
0.31
(0.012)
rad.
2
1
1.91 ± 0.10
(0.075 ± 0.004)
3.05 ± 0.13
(0.12 ± 0.005)
0.31
(0.012)
rad.
A = 1.02 ± 0.10
(0.04 ± 0.004)
A
1.40
(0.055)
max.
SILICON EPITAXIAL
PLANAR DIODE
General Purpose and
Switching Diode in
Hermetic Ceramic Surface Mount
Package for
High Reliability Applications
PAD 1 â Anode
SOT23 CERAMIC
(LCC1 PACKAGE)
Underside View
PAD 2 â Not Connected PAD 3 â Cathode
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
Parameter
Test Conditions
Min. Typ.
VR
VRRM
IF(AV)
IF
IFRM
IFSM
Reverse Voltage
Repetitive Peak Reverse Voltage
Average Rectified Forward Current
Forward Current
Repetitive Peak Forward Current
t = 1µs
Non-Repetitive Peak Forward Current
t = 1s
Ptot Power Dissipation at Tamb = 25 °C
Max.
100
100
150
200
450
2000
500
500
Unit
V
V
mA
mA
mA
mA
mW
CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Parameter
Test Conditions
VF
Forward Voltage
IR
Reverse Current
Reverse Avalanche Breakdown
V(BR)R Voltage
Cd
Capacitance
Vfr
Forward Recovery Voltage
trr
Reverse Recovery Time
IF = 10mA
VR = 20V
VR = 20V , Tj = 150°C
IR = 100µA
IR = 5µA
VR = 0V , f = 1 MHz
IF = 50mA , tr = 20ns
IF = 10mA to IR = 60mA
RL = 100â¦
Min.
100
100
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Typ.
Max.
1
25
50
4
2.5
4
Unit
V
nA
µA
V
V
pF
V
ns
10/99
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