1N4148CSM_09 Datasheet, PDF (1/4 Pages) Seme LAB – SILICON EPITAXIAL PLANAR DIODE

SILICON EPITAXIAL
PLANAR DIODE
1N4148CSM
• Low Leakage
• Fast Switching
• Low Forward Voltage
• Hermetic Ceramic Surface Mount Package
• Suitable for general purpose, switching applications.
• Screening Options Available
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated)
VBR
Breakdown Voltage
100V
VRWM _{Working Peak Reverse Voltage}
75V
IO⁽¹⁾
Average Rectified Output Current, TA = 75°C
200mA
IFSM
Surge Current, half sine wave, tp = 8.3ms
2A
PD⁽¹⁾
Total Power Dissipation at ^{TA = 75°C}
385mW
Derate Above 75°C
3.08mW/°C
PD
Total Power Dissipation at ^{TSP = 75°C}
1.042W
Derate Above 75°C
8.33mW/°C
TJ
Junction Temperature Range
-65 to +200°C
Tstg
Storage Temperature Range
-65 to +200°C
THERMAL PROPERTIES
Symbols Parameters
R_θJA(PCB)⁽¹⁾ _{Thermal Resistance, Junction To Ambient, On PCB}
R_θJSP
Thermal Resistance, Junction To Solder Pads
Min.
Typ.
Max. Units
325 °C/W
120 °C/W
Notes
(1) PCB = FR4 – 0.0625 Inch (1.59mm), 1 Layer, 1.0-Oz Cu, horizontal, in still air.
R_θJA with a defined PCB thermal resistance condition included, is measured at IO = 200mA.
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
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Document Number 7789
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