1N4148CSM Datasheet, PDF (1/2 Pages) Seme LAB – SILICON EPITAXIAL PLANAR DIODE

1N4148CSM
MECHANICAL DATA
Dimensions in mm (inches)
0.51 ± 0.10
(0.02 ± 0.004)
3
0.31
(0.012)
rad.
SILICON EPITAXIAL
PLANAR DIODE
2
1
1.91 ± 0.10
(0.075 ± 0.004)
3.05 ± 0.13
(0.12 ± 0.005)
0.31
(0.012)
rad.
A = ^{1.02 ± 0.10}
(0.04 ± 0.004)
SOT23 CERAMIC
(LCC1 PACKAGE)
A
1.40
(0.055)
max.
Fast Switching Diode in
Hermetic Ceramic Surface Mount Package
For High Reliability Applications
Underside View
PAD 1 — Anode PAD 2 — Not Connected PAD 3 — Cathode
ABSOLUTE MAXIMUM RATINGS (T_case = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
V_R
V_RRM
I_F(AV)
I_F
I_FRM
I_FSM
Reverse Voltage
Repetitive Peak Reverse Voltage
Average Rectified Forward Current
Forward Current
Repetitive Peak Forward Current
t = 1ms
Non-Repetitive Peak Forward Current
t = 1s
P_tot Power Dissipation at T_amb = 25 °C
Typ.
Max.
75
75
150
200
450
2000
500
500
Unit
V
V
mA
mA
mA
mA
mW
T_stg
Storage Temperature Range
Tj
Max junction temperature
-55 to +175 °C
+150°C
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Prelim. 7/00