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SSG4501 Datasheet, PDF (9/9 Pages) SeCoS Halbleitertechnologie GmbH – Enhancement Mode Power Mos.FET
Elektronische Bauelemente
P-Channel
SSG4501
N Channel 7A, 30V,RDS(ON) 28m
P Channel -5.3A, -30V,RDS(ON) 50m
Enhancement Mode Power Mos.FET
Fig 13. Switching Time Circuit
Fig 14. Switching Time Waveform
Fig 15. Gate Charge Circuit
Fig 16. Gate Charge Waveform
h tp://www.SeCoSGmbH.com/
01-Jun-2002 Rev.A
Any changing of specification will not be informed individual
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