SSG4565 Datasheet, PDF (5/7 Pages) SeCoS Halbleitertechnologie GmbH – Enhancement Mode Power Mos.FET

Elektronische Bauelemente
N-Channel
SSG4565
N Channel 7.6A, 40V,RDS(ON) 25m
P Channel 6.5A, 40V,RDS(ON) 33m
Enhancement Mode Power Mos.FET
Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Fig 12. Gate Charge Waveform
Any changing of specification will not be informed individual
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