SMUN5211DW Datasheet, PDF (5/8 Pages) SeCoS Halbleitertechnologie GmbH – NPN Multi-Chip Built-in Resistors Transistor

Elektronische Bauelemente
SMUN52XXDW
NPN Multi-Chip
Built-in Resistors Transistor
TYPICAL ELECTRICAL CHARACTERISTICS – SMUN5211DW
1
1000
0.1
100
0.01
0.001
0
4
20
40
I C , COLLECTOR CURRENT (mA)
Figure 2. V CE(sat) versus I C
10
50
1
100
10
100
I C , COLLECTOR CURRENT (mA)
Figure 3. DC Current Gain
10
3
1
2
0.1
1
0.01
0
0
10
20
30
40
50
V R , REVERSE BIAS VOLTAGE (VOLTS)
Figure 4. Output Capacitance
10
0.001
0
12
3
4
5
6
78
9 10
V in , INPUT VOLTAGE (VOLTS)
Figure 5. Output Current versus Input Voltage
1
http://www.SeCoSGmbH.com
22-Jun-2007 Rev. A
0.1
0
10
20
30
40
50
I _C , COLLECTOR CURRENT (mA)
Figure 6. Input Voltage versus Output Current
Any changing of specification will not be informed individual
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