SMG2300 Datasheet, PDF (4/4 Pages) SeCoS Halbleitertechnologie GmbH – N-Channel Enhancement Mode Power Mos.FET

Elektronische Bauelemente
SMG2300
6A, 20V,RDS(ON) 28m
N-Channel Enhancement Mode Power Mos.FET
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Transfer Characteristics
Fig 10. Single Pulse Power
Fig 11. Normalized Thermal Transient Impedance, Junction to Ambient
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
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