SID9971 Datasheet, PDF (4/4 Pages) SeCoS Halbleitertechnologie GmbH – N-Channel EnhancementMode PowerMos.FET

Elektronische Bauelemente
SID9971
25A, 60V,RDS(ON)36 m
N-Channel Enhancement Mode Power Mos.FET
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Fig 12. Gate Charge Waveform
Any changing of specification will not be informed individual
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