STT3585 Datasheet, PDF (3/7 Pages) SeCoS Halbleitertechnologie GmbH – N And P-Channel Enhancement Mode Power Mos.FET

Elektronische Bauelemente
STT3585
3.5 A, 20V ,RDS(ON)75m
-2.5 A, -20V ,RDS(ON)160m
N And P-Channel Enhancement Mode Power Mos.FET
P-Channel Electrical Characteristics( Tj=25^oC Unless otherwise specified)
Parameter
Symbol
Min. Typ.
Max. Unit Test Condition
Drain-Source Breakdown Voltage
BVDSS
- 20
_
_
V
VGS=0V, ID=-250uA
Breakdown Voltage Temp. Coefficient
BVDS/ Tj
_
-0.01
_
V/ ^oC Reference to 25^oC,ID=-1mA
Gate Threshold Voltage
VGS(th)
_
_
-1.2
V
VDS=VGS, ID=-250uA
Gate-Source Leakage Current
IGSS
_
_
±100
nA
VGS=±12 V
Drain-Source Leakage Current (Tj=25^oC)
IDSS
Drain-Source Leakage Current (Tj=70^oC )
_
_
-1
uA
VDS=-20V,VGS=0
_
_
-25
uA
VDS=-16V,VGS=0
_
_
120
VGS=-10V, ID=-2.8A
Static Drain-Source On-Resistance²
RDS(ON)
_
_
160
m
VGS=-4.5V, ID=-2.5A
_
_
300
VGS=-2.5V, ID=-2A
Total Gate Charge²
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time²
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Qg
Qgs
Qgd
Td(ON)
Tr
Td(Off)
Tf
Ciss
Coss
Crss
_
5
8
ID=-2A
_
1
_
nC
VDS=-16V
_
2
_
VGS=-4.5V
_
6
_
17
_
16
_
5
_
VDS=-10V
_
ID=-1A
nS
VGS=-10V
_
RG=3.3
RD=10
_
_
270
430
VGS=0V
_
70
_
pF
VDS=-20V
_
55
_
f=1.0MHz
Forward Transconductance
Gfs
_
4
_
S
VDS=-5V, ID=-2A
Source-Drain Diode
Parameter
Forward On Voltage²
Reverse Recovery Time ²
Reverse Recovery Charge
Symbol
VDS
Trr
Qrr
Min.
_
_
_
Typ.
_
20
15
Max.
-1.2
_
_
Unit
V
Test Condition
IS=-1.2A,VGS=0V.
nS _{Is=-2A, V GS=0V}
nC
dl/dt=100A/uS
Notes: 1.Pulse width limited by Max. junction temperature.
2.Pulse width 300us, dutycycle 2%.
3.Surface mounted on 1 in² copper pad of FR4 board; 1 5sec;180^OC/W when mounted on Min. copper pad.
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Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
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