STESD03C Datasheet, PDF (3/3 Pages) SeCoS Halbleitertechnologie GmbH – Low Capacitance ESD Protection (Bi-directional)

Elektronische Bauelemente
STESD03C
70W, 3.3V
Low Capacitance ESD Protection (Bi-directional)
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Symbol Min Typ Max Unit
Test Conditions
Reverse Working Voltage ³
VRWM
-
-
3.3
V
Reverse Breakdown Voltage
VBR
4
-
6
V IT=1mA
Reverse Leakage Current
Clamping Voltage ²
IR
-
-
0.4
µA VRWM=3.3V
VC
-
-
10
V IPP=7A
Junction Capacitance
CJ
-
-
15
pF
Notes :
1.
2.
3.
Device stressed with ten non-repetitive ESD pulses.
Non-repetitive current pulse 8/20µs exponential decay waveform according to IEC61000-4-5.
Other voltages available upon request.
VR=0V, f=1MHz
RATINGS AND CHARACTERISTICS CURVES
http://www.SeCoSGmbH.com/
07-Feb-2017 Rev. A
Any changes of specification will not be informed individually.
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