SSG4512CE_15 Datasheet, PDF (3/7 Pages) SeCoS Halbleitertechnologie GmbH – N & P-Ch Enhancement Mode Power MOSFET

Elektronische Bauelemente
SSG4512CE
N & P-Ch Enhancement Mode Power MOSFET
N-Ch: 6.9 A, 30 V, R_DS(ON) 31 mΩ
P-Ch: -5.2 A, -30 V, R_DS(ON) 52 mΩ
P-CHANNEL ELECTRICAL CHARACTERISTICS (T_A=25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Static
Gate Threshold Voltage
VGS(th)
-1
-
-
V VDS=VGS, ID= -250µA
Gate-Source Leakage Current
IGSS
-
-
±100 nA VGS= -8V, VDS=0
Drain-Source Leakage Current
On-State Drain Current¹
IDSS
-
-
ID(ON)
-20
-
-1
µA VDS= -24V, VGS=0
-
A VDS= -5V, VGS= -10V
Static Drain-Source On-Resistance¹
Forward Transconductance¹
-
RDS(ON)
-
gfs
-
-
52
VGS= -10V, ID= -5.2A
mΩ
-
80
VGS= -4.5V, ID= -4.2A
10
-
S VDS= -15V, ID= -5.2A
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain (“Miller”) Change
Qg
-
10
ID= -5.2A
Qgs
-
2.2
-
nC V_DS= -15V
Qgd
-
1.7
-
VGS= -10V
Turn-on Delay Time
Td(on)
-
10
-
Rise Time
Tr
-
2.8
-
Turn-off Delay Time
Td(off)
-
53.6
-
Fall Time
Tf
-
46
-
Notes:
1. Pulse test: PW ≦ 300us duty cycle ≦ 2%.
2. Guaranteed by design, not subject to production testing.
VDD= -15V
nS ^{VGS= -10V}
ID= -1A
RGEN=6Ω
http://www.SeCoSGmbH.com/
26-Dec-2011 Rev. A
Any changes of specification will not be informed individually.
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