SMG2313 Datasheet, PDF (3/4 Pages) SeCoS Halbleitertechnologie GmbH – P-Channel Enhancement Mode Power Mos.FET

Elektronische Bauelemente
Characteristics Curve
SMG2313
-2.5A,-20V,RDS(ON) 160m
P-Channel Enhancement Mode Power Mos.FET
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristics of
Reverse Diode
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
Any changing of specification will not be informed individual
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