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| SMG2306NE_15 Datasheet, PDF (3/4 Pages) SeCoS Halbleitertechnologie GmbH – N-Channel Enhancement Mode Mos.FET | |||
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Elektronische Bauelemente
CHARACTERISTIC CURVE
SMG2306NE
3.5A , 30V , RDS(ON) 58 mï
N-Channel Enhancement Mode Mos.FET
http://www.SeCoSGmbH.com/
12-Apr-2011 Rev. B
Any changes of specification will not be informed individually.
Page 3 of 4
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