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| SID10N30_15 Datasheet, PDF (3/4 Pages) SeCoS Halbleitertechnologie GmbH – N-Channel Enhancement MOSFET | |||
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Elektronische Bauelemente
CHARACTERISTIC CURVE
SID10N30-600I
5.8A, 300V, RDS(ON) 600 mï
N-Channel Enhancement MOSFET
http://www.SeCoSGmbH.com/
04-Dec-2012 Rev. B
Any changes of specification will not be informed individually.
Page 3 of 4
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