MMBT4403_15 Datasheet, PDF (3/4 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

Elektronische Bauelemente
MMBT4403
PNP Silicon
Switching Transistor
SMALL−SIGNAL CHARACTERISTICS NOISE FIGURE
V_{CE = −10 Vdc, TA = 25°C; Bandwidth = 1.0 Hz}
10
10
f = 1 kHz
8
8
6
I_C = 1.0 mA, R_S = 430 W
I_C = 500 mA, R_S = 560 W
I_C = 50 mA, R_S = 2.7 kW
4
I_C = 100 mA, R_S = 1.6 kW
6
I_C = 50 mA
100 mA
4
500 mA
1.0 mA
2
R_S = OPTIMUM SOURCE RESISTANCE
2
0
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20
f, FREQUENCY (kHz)
Figure 8. Frequency Effects
50 100
0
50 100 200
500 1 k 2 k
5 k 10 k 20 k 50 k
R_S, SOURCE RESISTANCE (OHMS)
Figure 9. Source Resistance Effects
h PARAMETERS
V_CE = 10 Vdc, f = 1.0 kHz, T_A = 255C
This group of graphs illustrates the relationship between h_fe and other ªhº parameters for this series of transistors. T o obtain
these curves, a high-gain and a low-gain unit were selected from the MMBT4403 lines, and the same units were used to
develop the correspondingly numbered curves on each graph.
1000
700
500
300
200
100
70
50
30
0.1
20
10
5.0
MMBT4403 UNIT 1
MMBT4403 UNIT 2
0.2 0.3 0.5 0.7 1.0
2.0 3.0
I_C, COLLECTOR CURRENT (mAdc)
Figure 10. Current Gain
5.0 7.0 10
MMBT4403 UNIT 1
MMBT4403 UNIT 2
2.0
1.0
0.5
100 k
50 k
20 k
10 k
5k
2k
1k
500
200
100
0.1
500
MMBT4403 UNIT 1
MMBT4403 UNIT 2
0.2 0.3 0.5 0.7 1.0
2.0 3.0
I_C, COLLECTOR CURRENT (mAdc)
Figure 11. Input Impedance
5.0 7.0 10
100
50
20
MMBT4403 UNIT 1
10
MMBT4403 UNIT 2
5.0
0.2
0.1
0.1
0.2 0.3 0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
I_C, COLLECTOR CURRENT (mAdc)
Figure 12. Voltage Feedback Ratio
2.0
1.00.1
0.2 0.3 0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
I_C, COLLECTOR CURRENT (mAdc)
Figure 13. Output Admittance
http://www.SeCoSGmbH.com
01-Jun-2004 Rev. B
Any changing of specification will not be informed individual
Page 3 of 4