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| TIP32 Datasheet, PDF (2/3 Pages) Power Innovations Ltd – PNP SILICON POWER TRANSISTORS | |||
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Elektronische Bauelemente
TIP32 / TIP32C
PNP Plastic-Encapsulate Transistor
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Collector-Base Breakdown
Voltage
TIP32
TIP32C
Symbol
V(BR)CBO
Min.
-40
-100
Typ.
-
-
Max.
-
-
Collector-Emitter Breakdown
Voltage1
TIP32
TIP32C
-40
-
V(BR)CEO
-100
-
-
-
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
TIP32
TIP32C
V(BR)EBO
-5
ICBO
-
-
-
-
-200
TIP32
Collector Cut-Off Current
ICEO
-
-
-0.3
TIP32C
Emitter Cut-Off Current
DC Current Gain
IEBO
-
-
-1
25
-
-
hFE
15
-
75
Collector-Emitter Saturation Voltage
VCE(sat)
-
Base-Emitter Voltage
VBE
-
Transition Frequency
fT
3
Notesï¼
1. Pulse Test: PWâ¦300μs, Duty Cycleâ¦2%.
-
-1.2
-
-1.8
-
-
Unit Test Conditions
V
IC= -1mA, IE=0
V
IC= -30mA, IB=0
V
μA
mA
mA
V
V
MHz
IE= -1mA, IC=0
VCB= -40V, IE=0
VCB= -100V, IE=0
VCE= -30V, IB=0
VCE= -60V, IB=0
VEB= -5V, IC=0
VCE= -4V, IC= -1A
VCE= -4V, IC= -3A
IC= -3A, IB= -0.375A
VCE= -4V, IC= -3A
VCE= -10V, IC= -0.5A
CHARACTERISTIC CURVE
http://www.SeCoSGmbH.com/
11-Jan-2012 Rev. B
Any changes of specification will not be informed individually.
Page 2 of 3
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