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SST3585_12 Datasheet, PDF (2/7 Pages) SeCoS Halbleitertechnologie GmbH – 3.5A, 20V, RDS(ON) 75m -2.5A, -20V, RDS(ON) 160m N And P-Channel Enhancement Mode Power MOSFET
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Elektronische Bauelemente
SST3585
3.5A, 20V, RDS(ON) 75m
-2.5A, -20V, RDS(ON) 160m
N And P-Channel Enhancement Mode Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Drain-Source Breakdown
Voltage
Breakdown Voltage Temp.
Coefficient
Gate-Threshold Voltage
Forward Transconductance
Gate-Source Leakage Current
Drain-Source Leakage Current
Drain-Source On-Resistance 1
Total Gate Charge1
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay Time1
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Symbol
N-Ch
P-Ch
BVDSS
N-Ch
P-Ch
△BVDSS/△TJ
N-Ch
P-Ch
VGS(th)
N-Ch
P-Ch
gfs
N-Ch
P-Ch
IGSS
N-Ch
P-Ch
N-Ch
IDSS
P-Ch
N-Ch
P-Ch
N-Ch
RDS(ON)
P-Ch
N-Ch
P-Ch
Qg
N-Ch
P-Ch
Qgs
N-Ch
P-Ch
Qgd
N-Ch
P-Ch
Td(on)
N-Ch
P-Ch
Tr
N-Ch
P-Ch
Td(off)
N-Ch
P-Ch
Tf
N-Ch
P-Ch
Ciss
N-Ch
P-Ch
Coss
N-Ch
P-Ch
Crss
N-Ch
P-Ch
Rg
Min. Typ.
Static
20
-
-20
-
-
0.02
-
-0.01
0.5
-
-
-
-
7
-
4
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
4
-
5
-
0.7
-
1
-
2
-
2
-
6
-
6
-
8
-
17
-
10
-
16
-
3
-
5
-
430
-
630
-
55
-
50
-
40
-
40
-
1.4
-
7
Max.
-
-
-
-
1.2
-1.2
-
-
±100
±100
1
-1
10
-25
75
160
125
300
7
8
-
-
-
-
-
-
-
-
-
-
-
-
520
750
-
-
-
-
1.7
10
Unit
Test Conditions
V
V/°C
V
S
nA
μA
mΩ
VGS=0, ID=250μA
VGS=0, ID= -250μA
Reference to 25°C, ID=1mA
Reference to 25°C, ID= -1mA
VDS=VGS, ID=250μA
VDS=VGS, ID= -250μA
VDS=5V, ID=3A
VDS= -5V, ID= -2A
VGS= ±12V
VGS= ±12V
VDS=20 V, VGS=0
VDS= -20 V, VGS=0
VDS=16V, VGS=0
VDS= -16V, VGS=0
VGS=4.5V, ID=3.5A
VGS= -4.5V, ID= -2.5A
VGS=2.5V, ID=1.2A
VGS= -2.5V, ID= -2A
N-Channel
VDS=16V, VGS=4.5V, ID=3A
nC
P-Channel
VDS= -16V, VGS= -4.5V, ID= -2A
N-Channel
VDS=15V, RG=3.3Ω,RD=15Ω
VGS=5V, ID=1A
nS
P-Channel
VDS= -10V, RG=3.3Ω,RD=10Ω
VGS= -10V, ID= -1A
N-Channel
VGS=0, VDS=20V, f=1.0MHz
pF
P-Channel
VGS=0, VDS= -20V, f=1.0MHz
Ω f=1.0MHz
http://www.SeCoSGmbH.com/
03-Jan-2012 Rev. G
Any changes of specification will not be informed individually.
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