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SST2605_15 Datasheet, PDF (2/4 Pages) SeCoS Halbleitertechnologie GmbH – P-Channel Enhancement Mode MOSFET
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Elektronische Bauelemente
SST2605
-4.0A , -30V , RDS(ON) 80 m
P-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (Tj=25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Teat Conditions
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage Current
Drain-Source Leakage Current
Drain-Source On-Resistance 2
Forward Transconductance
BVDSS
BVDS /△Tj
VGS(th)
IGSS
IDSS
RDS(ON)
gfs
Static
-30
-
-
-0.02
-1
-
-
-
-
-
-
-
-
-
-
-
-
6
-
-
-3
±100
-1
-25
80
120
-
V
V/°C
V
nA
uA
mΩ
S
VGS=0, ID= -250uA
Reference to 25°C, ID= -1mA
VDS=VGS, ID= -250uA
VGS=±20V
VDS= -24V, VGS=0, TJ=25°C
VDS= -24V, VGS=0, TJ=55°C
VGS= -10V, ID= -4A
VGS= -4.5V, ID= -3A
VDS= -5V, ID= -4A
Total Gate Charge2
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
Ciss
Coss
Crss
Dynamic
-
5.5
8.8
-
1
-
-
2.6
-
-
7
-
-
6
-
-
18
-
-
4
-
-
400 640
-
90
-
-
30
-
VDS= -24V,
nC VGS= -4.5V,
ID= -4A
VDD= -15V,
VGS= -10V,
nS RG=3.3Ω,
RD=15Ω,
ID= -1A
VGS=0V
pF VDS= -25V,
f=1.0MHz
Source-Drain Diode
Diode Forward Voltage 2
VSD
-
-
-1.2
V IS= -1.6A, VGS=0V
Reverse Recovery Time2
TRR
-
21
-
ns IS= -4A, VGS=0
Reverse Recovery Charge
QRR
-
14
-
nC dI/dt=100A/us
Notes:
1. Pulse width limited by safe operating area.
2. Pulse width≦300us, dutycycle ≦2%
3. Surface mounted on 1 in2 copper pad of FR4 board, 156°C/W when mounted on Min. copper pad.
http://www.SeCoSGmbH.com/
09-Oct-2014 Rev. E
Any changes of specification will not be informed individually.
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