SSRF10N60SL Datasheet, PDF (2/5 Pages) SeCoS Halbleitertechnologie GmbH – N-Ch Enhancement Mode Power MOSFET

Elektronische Bauelemente
SSRF10N60SL
10A , 600V , R_DS(ON) 1Ω
N-Ch Enhancement Mode Power MOSFET
ELECTRICAL CHARACTERISTICS (T_J = 25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Teat Conditions
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
BVDSS
600
-
-
V VGS=0, ID= 250µA
VGS(th)
2
-
4
V VDS=VGS, ID=250µA
Gate-Source Leakage Current
IGSS
-
-
±100 nA VGS= ±30V
Drain-Source Leakage Current
IDSS
-
-
1
µA VDS=600V, VGS=0
Static Drain-Source On-Resistance
Total Gate Charge ^1.2
Gate-Source Charge ^1.2
Gate-Drain Change ^1.2
Turn-on Delay Time ^1.2
Rise Time ^1.2
Turn-off Delay Time ^1.2
Fall Time ^1.2
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
RDS(ON)
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
Ciss
Coss
Crss
-
0.75
1
-
19.38
-
-
6.26
-
-
6.55
-
-
32.33
-
-
60.40
-
-
58.67
-
-
38.67
-
-
1132
-
-
135
-
-
3.91
-
Ω VGS=10V, ID=5A
ID=10A
nC V_DS=480V
VGS=10V
VDD=300V
nS I_D=10A
RG=25 Ω
VGS =0
pF VDS=25V
f =1.0MHz
Source-Drain Diode
Diode Forward Voltage
VSD
Continuous Source Current
IS
Pulsed Source Current
ISM
Reverse Recovery Time ^1.
Trr
Reverse Recovery Charge ^1.
Qrr
Notes:
1. Pulse Test: Pulse width ≦300µS, Duty cycle≦2%
2. Essentially independent of operating temperature.
-
-
1.3
-
-
10
-
-
40
- 535.39 -
-
4.6
-
V IS=10A, VGS=0
A Integral Reverse P-N
Junction Diode in the
A MOSFET
ns _{IS=10A,VGS=0,}
µC ^{dlF/dt=100A/µS}
http://www.SeCoSGmbH.com/
25-Sep-2013 Rev. A
Any changes of specification will not be informed individually.
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