SSRF06N70SL_15 Datasheet, PDF (2/5 Pages) SeCoS Halbleitertechnologie GmbH – N-Ch Enhancement Mode Power MOSFET

Elektronische Bauelemente
SSRF06N70SL
6A , 700V , R_DS(ON) 1.7Ω
N-Ch Enhancement Mode Power MOSFET
ELECTRICAL CHARACTERISTICS (T_J = 25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Teat Conditions
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
BVDSS
700
-
-
V VGS=0, ID= 250µA
VGS(th)
2
-
4
V VDS=VGS, ID=250µA
Gate-Source Leakage Current
IGSS
-
-
±100 nA VGS= ±30V , VDS=0
Drain-Source Leakage Current
IDSS
-
-
1
µA VDS=700V, VGS=0
Static Drain-Source On-Resistance
Total Gate Charge ^2,3
Gate-Source Charge ^2,3
Gate-Drain Change ^2,3
Turn-on Delay Time ^2,3
Rise Time ^2,3
Turn-off Delay Time ^2,3
Fall Time ^2,3
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
RDS(ON)
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
Ciss
Coss
Crss
-
1.35 1.7
Ω VGS=10V, ID=3A
-
21.94
-
-
6.06
-
-
8.82
-
ID=6A
nC V_DS=560V
VGS=10V
-
24
-
-
36.93
-
-
68
-
VDD=350V
nS I_D=6A
RG=25 Ω
-
36.53
-
-
1039
-
-
98
-
-
3.88
-
VGS =0
pF VDS=25V
f =1.0MHz
Source-Drain Diode
Diode Forward Voltage
Continuous Source Current
Pulsed Source Current
VSD
-
-
1.4
V IS=6A, VGS=0
IS
-
-
6
A Integral Reverse P-N
Junction Diode in the
ISM
-
-
24
A MOSFET
Reverse Recovery Time
Trr
Reverse Recovery Charge
Qrr
Notes:
1. L=30mH, IAS=5A, VDD=140V, RG=25 Ω, starting TJ=25°C
2. Pulse Test: Pulse width ≦300µS, Duty cycle≦2%
3. Essentially independent of operating temperature.
-
494
-
-
3.42
-
ns _IS=6A,VGS=0,
µC ^{dlF/dt=100A/µS}
http://www.SeCoSGmbH.com/
25-Sep-2014 Rev. A
Any changes of specification will not be informed individually.
Page 2 of 5