SSRF03N80SL_15 Datasheet, PDF (2/5 Pages) SeCoS Halbleitertechnologie GmbH – N-Ch Enhancement Mode Power MOSFET

Elektronische Bauelemente
SSRF03N80SL
3A , 800V , R_DS(ON) 4.8Ω
N-Ch Enhancement Mode Power MOSFET
ELECTRICAL CHARACTERISTICS (T_J = 25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Teat Conditions
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
BVDSS
800
-
-
V VGS=0, ID= 250µA
VGS(th)
2
-
4
V VDS=VGS, ID=250µA
Gate-Source Leakage Current
IGSS
-
-
±100 nA VGS= ±30V, VDS=0
Drain-Source Leakage Current
IDSS
-
-
1
µA VDS=800V, VGS=0
Static Drain-Source On-Resistance
Total Gate Charge ^1.2
Gate-Source Charge ^1.2
Gate-Drain Change ^1.2
Turn-on Delay Time ^1.2
Rise Time ^1.2
Turn-off Delay Time ^1.2
Fall Time ^1.2
RDS(ON)
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
-
3.8
4.8
Ω VGS=10V, ID=1.5A
-
9
-
-
2.46
-
-
3.74
-
ID=3A
nC V_DS=640V
VGS=10V
-
13.87
-
-
30.53
-
-
22.40
-
VDD=400V
nS I_D=3A
RG=25 Ω
-
18.27
-
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
-
390.3
-
VGS =0
Coss
-
42.7
-
pF VDS=25V
f =1.0MHz
Crss
-
2
-
Gate Resistance
RG
-
4.4
-
Ω F=1MHz,1Vpp
Source-Drain Diode
Diode Forward Voltage
VSD
Continuous Source Current
IS
Pulsed Source Current
ISM
Reverse Recovery Time ^1.
Trr
Reverse Recovery Charge ^1.
Qrr
Notes:
1. Pulse Test: Pulse width ≦300µS, Duty cycle≦2%
2. Essentially independent of operating temperature.
-
-
1.4
V IS=3A, VGS=0
-
-
3
A Integral Reverse P-N
Junction Diode in the
-
-
12
A MOSFET
-
437
-
-
1.68
-
ns _IS=3A,VGS=0,
µC ^{dlF/dt=100A/µS}
http://www.SeCoSGmbH.com/
28-Nov-2013 Rev. A
Any changes of specification will not be informed individually.
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