SSRF02N65SL Datasheet, PDF (2/5 Pages) SeCoS Halbleitertechnologie GmbH – N-Ch Enhancement Mode Power MOSFET

Elektronische Bauelemente
SSRF02N65SL
2A , 650V , R_DS(ON) 4.8Ω
N-Ch Enhancement Mode Power MOSFET
ELECTRICAL CHARACTERISTICS (T_J = 25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Teat Conditions
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
BVDSS
650
-
-
V VGS=0, ID= 250µA
VGS(th)
2
-
4
V VDS=VGS, ID=250µA
Gate-Source Leakage Current
IGSS
-
-
±100 nA VGS= ±30V
Drain-Source Leakage Current
IDSS
-
-
1
µA VDS=650V, VGS=0
Static Drain-Source On-Resistance
Total Gate Charge ^1.2
Gate-Source Charge ^1.2
Gate-Drain Change ^1.2
Turn-on Delay Time ^1.2
Rise Time ^1.2
Turn-off Delay Time ^1.2
Fall Time ^1.2
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
RDS(ON)
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
Ciss
Coss
Crss
-
4.3
4.8
Ω VGS=10V, ID=1A
-
5.83
-
-
1.73
-
-
2
-
ID=2A
nC V_DS=520V
VGS=10V
-
10.67
-
-
20
-
-
12.4
-
VDD=325V
nS I_D=2A
RG=25 Ω
-
18
-
-
261.8
-
-
34.3
-
-
1.3
-
VGS =0
pF VDS=25V
f =1.0MHz
Source-Drain Diode
Diode Forward Voltage
Continuous Source Current
Pulsed Source Current
VSD
-
-
1.4
V IS=2A, VGS=0
IS
-
-
2
A Integral Reverse P-N
Junction Diode in the
ISM
-
-
8
A MOSFET
Reverse Recovery Time
Trr
Reverse Recovery Charge
Qrr
Notes:
1. Pulse Test: Pulse width ≦300µS, Duty cycle≦2%
2. Essentially independent of operating temperature.
- 368.88 -
-
1.08
-
ns _IS=2A,VGS=0,
µC ^{dlF/dt=100A/µS}
http://www.SeCoSGmbH.com/
25-Sep-2013 Rev. A
Any changes of specification will not be informed individually.
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