SSP7436N_15 Datasheet, PDF (2/2 Pages) SeCoS Halbleitertechnologie GmbH – N-Channel Enhancement MOSFET

Elektronische Bauelemente
SSP7436N
24 A, 30 V, R_DS(ON) 4.6 m
N-Channel Enhancement MOSFET
ELECTRICAL CHARACTERISTICS (T_A=25°C unless otherwise specified)
Parameter
Symbol Min Typ Max Unit
Test conditions
Static
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current ^A
Drain-Source On-Resistance ^A
Forward Transconductance ^A
Diode Forward Voltage
V_GS(th)
I_GSS
I_DSS
I_D(ON)
R_DS(ON)
g_FS
V_SD
1
-
-
V V_DS = V_GS, I_D = 250μA
-
-
100
nA V_DS = 0V, V_GS= 20V
-
-
1
μA ^{VDS = 24V, VGS= 0V}
-
-
5
V_DS = 24V, V_GS= 0V, T_J=55°C
40
-
-
A V_DS = 5V, V_GS= 10V
-
-
4.6
mΩ ^{VGS= 10V, ID = 10A}
-
-
5.5
V_GS= 4.5V, I_D = 8A
-
40
-
S V_DS= 15V,_,I_D = 10A
-
0.7
-
V I_S= 2.3A, V_GS= 0V
Dynamic ²
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Q_g
-
15
-
I_D= 10A
Q_gs
-
3
-
nC V_DS= 15V
Q_gd
-
5
-
V_GS= 4.5V
Turn-On Delay Time
Td_(ON)
-
15
-
Rise Time
Turn-Off Delay Time
T_r
Td_(OFF)
-
10
-
-
54
-
I_D= 1A, V_DD= 15V
nS V_GEN= 10V
R_L= 6Ω
Fall Time
T_f
-
26
-
Notes
1. Pulse test：PW ≦ 300 us duty cycle ≦ 2%.
2. Guaranteed by design, not subject to production testing.
http://www.SeCoSGmbH.com/
18-Sep-2013 Rev. B
Any changes of specification will not be informed individually.
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