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| SSM452 Datasheet, PDF (2/4 Pages) SeCoS Halbleitertechnologie GmbH – P-Channel Enhancement Mode Power MOSFET | |||
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Elektronische Bauelemente
SSM452
-6 A, -30V, RDS(ON) 55mâ¦
P-Channel Enhancement Mode Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
PARAMETER
SYMBOL MIN TYP MAX UNIT TEST CONDITION
Drain-Source Breakdown Voltage
BVDSS
-30
-
-
Breakdown Voltage
Temperature Coefficient
â³BVDSS / â³TJ
-
-0.02
-
Gate Threshold Voltage
Forward Transconductance
VGS(TH)
gFS
-1.0
-
-3.0
-
10
-
Gate-Source Leakage Current
Drain-Source Leakage Current
(TJ= 25°C)
Drain-Source Leakage Current
(TJ= 70°C)
Drain-Source On Resistance
Total Gate Charge 2
IGSS
IDSS
RDS(ON)
Qg
-
-
±100
-
-
-1
-
-
-25
-
45
55
-
75
100
-
9.2
16
Gate-Source Charge
Gate-Drain (âMillerâ) Charge
Turn-on Delay Time 2
Rise Time
Turn-off Delay Time
Qgs
Qgd
Td(ON)
Tr
Td(OFF)
-
2.8
-
-
5.2
-
-
11
-
-
8
-
-
25
-
Fall Time
Input Capacitance
Tf
-
17
-
CISS
-
507
912
Output Capacitance
Reverse Transfer Capacitance
COSS
CRSS
-
222
-
-
158
-
SOURCE-DRAIN DIODE
V
V / °C
V
S
nA
VGS= 0V, ID = -250uA
Reference to 25°C,
ID= -1mA
VDS= VGS, ID = -250uA
VDS= -10V, ID= -5.3A
VGS= ±20V
VDS= -30V, VGS=0V
μA
VDS= -24V, VGS=0V
m⦠VGS= -10V, ID= -5.3A
VGS= -4.5V, ID= -4.2A
VGS= -4.5V
nC VDS= -24V
ID= -5.3A
VDS= -15V
nS
VGS= -10V
ID= -1A
RG= 6â¦, RD= 15â¦
VDS= -15V
pF VGS= 0V
f= 1MHz
Forward On Voltage 2
Reverse Recovery Time
Reverse Recovery Charge
VSD
-
-
-1.2
V VGS= 0V, IS= -2.3A
Trr
-
29
-
nS VGS= 0V, IS= -5.3A,
Qrr
-
20
-
nC dl/dt= 100A/μs
Note:
1. Pulse width limited by Maximum junction temperature.
2. Pulse width ⦠300 μs, Duty cycle ⦠2%
3. Surface mounted on 1 in2 copper pad of FR4 board; 120°C / W when mounted on Min. copper pad.
http://www.SeCoSGmbH.com/
24-Jun-2010 Rev. A
Any changes of specification will not be informed individually.
Page 2 of 4
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