SSM3055L_15 Datasheet, PDF (2/4 Pages) SeCoS Halbleitertechnologie GmbH – N-Channel Enhancement Mode MOSFET

Elektronische Bauelemente
SSM3055L
2.8A , 60V , R_DS(ON) 100 mΩ
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (T_A=25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Teat Conditions
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage Current
BVDSS
VGS(th)
IGSS
60
-
-
V VGS=0, ID=250µA
1
-
2.5
V VDS=VGS, ID=250µA
-
-
±100
nA VGS=±20V
Drain-Source Leakage
Current
TJ=25°C
TJ=55°C
-
-
1
V DS=48V, VGS=0
IDSS
µA
-
-
5
VDS=48V, VGS=0
Drain-Source On-Resistance ²
-
-
100
VGS=10V, ID=2.5A
RDS(ON)
mΩ
-
-
110
VGS=4.5V, ID=2A
Total Gate Charge
Gate-Source Charge
Gate-Drain (‘’Miller’’)Charge
Turn-on Delay Time ²
Rise Time
Turn-off Delay Time
Fall Time
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
-
5
-
-
1.68
-
-
1.9
-
-
1.6
-
-
7.2
-
-
25
-
-
14.4
-
VDS=48V,
nC VGS=4.5V,
ID=2A
VDD=30V,
nS
VGS=10V,
RG=3.3Ω,
ID=2A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
-
511
-
-
38
-
-
25
-
Source-Drain Diode
VGS=0,
pF VDS=15V,
f=1.0MHz
Diode Forward Voltage²
Continuous Source Current^1.4
Pulsed Source Current^2.4
VSD
-
-
1.2
V IS=1A, VGS=0
IS
-
-
2.8
A VG=VD=0, Force Current
ISM
-
-
12
Reverse Recovery Time
Reverse Recovery Charge
TRR
-
9.7
-
nS _{IS=2A, dI/dt=100A/µs}
QRR
-
5.8
-
nC ^VGS=0
Notes:
1. Surface mounted on a 1 inch2 FR4 board with 2OZ copper, t≦10sec., 125°C /W when mounted on Min. copper pad.
2. The data tested by pulsed , pulse width≦300µs, duty cycle≦2%
3. The power dissipation is limited by 150 °C junc tion temperature
4. The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation
http://www.SeCoSGmbH.com/
26-Jul-2013 Rev. A
Any changes of specification will not be informed individually.
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