SSL4407 Datasheet, PDF (2/4 Pages) SeCoS Halbleitertechnologie GmbH – P-Channel Enhancement Mode Power Mos.FET

Elektronische Bauelemente
SSL4407
-50A, -30V,RDS(ON) 14m
P-Channel Enhancement Mode Power Mos.FET
Electrical Characteristics( Tj=25^oC Unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage
Symbol
BVDSS
Breakdown Voltage Temp. Coefficient
BVDS/ Tj
Gate Threshold Voltage
VGS(th)
Gate-Source Leakage Current
IGSS
Drain-Source Leakage Current (Tj=25^oC)
IDSS
Drain-Source Leakage Current(Tj=150^oC ⁾
Static Drain-Source On-Resistance²
RD S(O N )
Total Gate Charge²
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time²
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Forward Transconductance
Qg
Qgs
Qgd
Td(ON)
Tr
Td(Off)
Tf
Ciss
Coss
Crss
Gfs
Min.
- 30
_
-1.0
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
Typ.
_
- 0.01
_
_
_
_
_
_
35
5
26
11
64
63
100
2120
630
550
36
Max.
_
_
-3.0
±100
-1
-25
14
23
60
_
_
_
_
_
_
3390
_
_
_
Unit
V
o
V/ C
V
nA
uA
uA
m
nC
nS
pF
S
Test Condition
VGS=0V, ID=-250uA
Reference to 25^oC, ID=-1mA
VDS=VGS, ID=-250uA
VGS=±25V
VDS=-3 0V,VGS=0
VDS=-24 V ,VGS=0
VGS=-10V, ID=- 24A
VGS=-4.5 V, ID=- 16A
ID=-24A
VDS=-24 V
VGS=-4.5V
VDD=-15 V
ID=-24A
VGS=-10V
RG=3.3
RD=0.63
VGS=0V
VDS=-25V
f=1.0MHz
VDS=-10V, ID=-24A
Source-Drain Diode
Parameter
Forward On Voltage²
Reverse Recovery Time²
Symbol
VSD
Trr
Reverse Recovery Change
Qrr
Notes: 1.Pulse _{width limited by safe operating area.}
2.Pulse width 300us, dutycycle 2%.
Min.
_
_
_
Typ.
_
39
38
Max.
-1.2
_
_
Unit
Test Condition
V
IS=-24A,VGS=0V.
nS
IS=-24A,VGS=0V.
nC
dl/dt=100A/us
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
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