SSL40N03 Datasheet, PDF (2/5 Pages) SeCoS Halbleitertechnologie GmbH – N-Channel Enhancement Mode Power Mos.FET

Elektronische Bauelemente
SSL40N03
40A, 30V,RDS(ON)17 m
N-Channel Enhancement Mode Power Mos.FET
Electrical Characteristics( Tj=25^oC Unless otherwise specified)
Parameter
Symbol
Drain-Source Breakdown Voltage
BVDSS
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
BVDS/ Tj
VGS(th)
Gate-Source Leakage Current
IGSS
Drain-Source Leakage Current (Tj=25^oC)
IDSS
Drain-Source Leakage Current(Tj=150^oC)
Static Drain-Source On-Resistance
RD S(O N )
Total Gate Charge²
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time²
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Forward Transconductance
Qg
Qgs
Qgd
Td(ON)
Tr
Td(Off)
Tf
Ciss
Coss
Crss
Gfs
Min.
30
_
1.0
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
Typ.
_
Max.
_
0.037
_
_
_
_
_
3.0
±100
25
250
14
17
22
24
17
_
3
_
10
_
7.2
_
60
_
22.5
_
10
_
800
_
380
_
133
_
26
_
Unit
V
o
V/ C
Test Condition
VGS=0V, ID=250uA
Reference to 25^oC, ID=1mA
V
VDS=VGS, ID=250uA
nA
VGS=±20V
uA
VDS=30V,VGS=0
uA
VDS=24V,VGS=0
VGS=10V, ID=20A
m
VGS=4.5V, ID=16A
ID=20A
nC
VDS=24V
VGS= 4.5V
VDD=15V
ID=20A
nS
VGS=10V
RG=3.3
RD=0.75
VGS=0V
pF
VDS=25V
f=1.0MHz
S
VDS=10V, ID=20A
Source-Drain Diode
Parameter
Symbol
Forward On Voltage²
VSD
Continuous Source Current(Body Diode)
IS
Pulsed Source Current(Body Diode)¹
ISM
Notes: 1.Pulse width limited by safe operating area.
2.Pulse width 300us, dutycycle 2%.
Min.
_
_
_
Typ.
_
_
_
Max.
1.3
40
169
Unit
V
Test Condition
IS=40 A, VGS=0V.Tj=25^oC
A
VD=VG=0V,VS=1.3 V
A
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
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