SSI2154 Datasheet, PDF (2/4 Pages) SeCoS Halbleitertechnologie GmbH – Dual N-Channel MOSFET

Elektronische Bauelemente
SSI2154
800mA, 20V
Dual N-Channel MOSFET
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typ.
Single Operation
Junction-to-Ambient Thermal Resistance ^{1 T≦10S}
285
RθJA
Steady State
340
Junction-to-Ambient Thermal Resistance ^{2 T≦10S}
385
RθJA
Steady State
455
Junction-to-Case Thermal Resistance
Steady State
RθJC
260
Dual Operation
Junction-to-Ambient Thermal Resistance ^{1 T≦10S}
315
RθJA
Steady State
370
Junction-to-Ambient Thermal Resistance ^{2 T≦10S}
420
RθJA
Steady State
505
Junction-to-Case Thermal Resistance
Steady State
RθJC
265
Note:
1. Surface mounted on FR4 Board using 1 square inch pad size, 1oz copper.
2. Surface mounted on FR4 board using minimum pad size, 1oz copper
3. Repetitive rating, pulse width limited by junction temperature, tp=10µs, Duty Cycle=1%
4. Repetitive rating, pulse width limited by junction temperature TJ=150°C.
Rating
Max.
335
405
450
545
300
365
440
490
585
305
Unit
°C / W
°C / W
ELECTRICAL CHARACTERISTICS (T_A=25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Teat Conditions
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
Gate-Threshold Voltage
Drain-Source On Resistance
Forward Transconductance
Diode Forward On–Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Static
V(BR)DSS
IDSS
IGSS
VGS(TH)
20
-
-
-
-
1
-
-
±5
0.45 0.58 0.85
-
220 310
RDS(ON)
-
260 360
-
320 460
gFS
-
2
-
Body-Drain Diode Ratings
VSD
0.5
0.7
1.5
Dynamic Characteristics
CISS
COSS
CRSS
QG(TOT)
QG(TH)
QGS
QGD
Td(ON)
Tr
-
60
-
-
11
-
-
7.5
-
-
1.15
-
-
0.06
-
-
0.15
-
-
0.23
-
-
22
-
-
80
-
Td(OFF)
Tf
-
700
-
-
380
-
V VGS=0, ID=250µA
µA VDS=16V, VGS=0
µA VDS=0 , VGS= ±5V
V VDS=VGS, ID=250µA
VGS=4.5V, ID=0.55A
mΩ VGS=2.5V, ID=0.45A
VGS=1.8V, ID=0.35A
S VDS=5V, ID= 0.55A
V IS=350mA, VGS=0
VDS=10V,
pF VGS=0,
f=100KHz
VDS=10V,
nC VGS=4.5V,
ID=0.55A
VDD=10V,
nS ^{I D=0.55A,}
VGS=4.5V,
RG=6Ω.
http://www.SeCoSGmbH.com/
18-Oct-2012 Rev. A
Any changes of specification will not be informed individually.
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