SSG9975 Datasheet, PDF (2/4 Pages) SeCoS Halbleitertechnologie GmbH – N-Channel Enhancement Mode Power Mos.FET

Elektronische Bauelemente
SSG9975
7.6A, 60V,RDS(ON) 21m
N-Channel Enhancement Mode Power Mos.FET
Electrical Characteristics( Tj=25^oC Unless otherwise specified)
Parameter
Symbol
Drain-Source Breakdown Voltage
BVDSS
Breakdown Voltage Temp. Coefficient
BVDS/ Tj
Gate Threshold Voltage
VGS(th)
Gate-Source Leakage Current
IGSS
Drain-Source Leakage Current (Tj=25^oC)
IDSS
Drain-Source Leakage Current (Tj=70^oC)
Static Drain-Source On-Resistance²
RDS(ON)
Total Gate Charge ²
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time²
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Qg
Qgs
Qgd
Td(ON)
Tr
Td(Off)
Tf
Ciss
Coss
Crss
Min.
60
_
1.0
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
Typ.
_
0.06
_
_
_
_
_
_
26
6
14
14
7
40
13
2320
200
170
Max.
_
_
3.0
±100
1
25
21
27
40
_
_
_
_
_
_
3700
_
_
Unit
V
V/ ^oC
V
nA
uA
uA
m
nC
nS
pF
Forward Transconductance
Gfs
_
12
_
S
Test Condition
VGS=0V, ID=250uA
Reference to 25^oC, ID=1mA
VDS=VGS, ID=250uA
VGS=± 25V
VDS=60V,VGS=0
VDS=48V,VGS=0
VGS=10V, ID=7A
VGS=4.5V, ID=5A
ID=7 A
VDS=48V
VGS=4.5 V
VDD=30V
ID=1A
VGS=10V
RG=3.3
RD=30
VGS=0V
VDS= 25V
f=1.0MHz
VDS=10V, ID=7A
Source-Drain Diode
Parameter
Forward On Voltage²
Reverse Recovery Time²
Reverse Recovery Charge
Symbol
VSD
Trr
Qrr
Min.
_
_
_
Typ.
_
34
48
Max.
1.2
_
_
Unit
V
nS
nC
Test Condition
IS=1.7A, VGS=0V.
Is=7A, VGS=0V
dl/dt=100A/us
Notes: 1.Pulse width limited by Max. junction temperature.
2.Pulse width 300us, dutycycle 2%.
3.Surface mounted on 1 inch2 copper pad of FR4 board;135^°C/W when mounted on min. copper pad.
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
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